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Fundamentals Of III-V Semiconductor Mosfets (Cód: 7050419)

Serge Oktyabrsky; Peide Ye

SPRINGER VERLAG POD

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Fundamentals Of III-V Semiconductor Mosfets

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Descrição

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a
future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as
band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of
dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a
detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress
and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different
semiconductor materials on Si platform.

Características

Peso 0.45 Kg
Produto sob encomenda Sim
Marca SPRINGER VERLAG POD
I.S.B.N. 9781441915467
Referência 9781441915467
Altura 23.40 cm
Largura 15.60 cm
Profundidade 2.54 cm
Número de Páginas 464
Idioma Inglês
Cód. Barras 9781441915467
Ano da edição 2010
AutorSerge Oktyabrsky; Peide Ye