Artboard 33 Artboard 16 Artboard 18 Artboard 15 Artboard 21 Artboard 1 Artboard 2 Artboard 5 Artboard 45 Artboard 45 Artboard 22 Artboard 9 Artboard 23 Artboard 17? Artboard 28 Artboard 43 Artboard 49 Artboard 47 Artboard 38 Artboard 32 Artboard 8 Artboard 22 Artboard 5 Artboard 25 Artboard 1 Artboard 42 Artboard 11 Artboard 41 Artboard 13 Artboard 23 Artboard 10 Artboard 4 Artboard 9 Artboard 20 Artboard 6 Artboard 11 Artboard 7 Artboard 3 Artboard 3 Artboard 12 Artboard 25 Artboard 34 Artboard 39 Artboard 24 Artboard 13 Artboard 19 Artboard 7 Artboard 24 Artboard 31 Artboard 4 Artboard 14 Artboard 27 Artboard 30 Artboard 36 Artboard 44 Artboard 12 Artboard 17 Artboard 17 Artboard 6 Artboard 27 Artboard 19 Artboard 30 Artboard 29 Artboard 29 Artboard 26 Artboard 18 Artboard 2 Artboard 20 Artboard 35 Artboard 15 Artboard 14 Artboard 48 Artboard 50 Artboard 26 Artboard 16 Artboard 40 Artboard 21 Artboard 29 Artboard 10 Artboard 37 Artboard 3 Artboard 3 Artboard 46 Artboard 8

Nitrides And Related Wide Band Gap Materials (Cód: 3049705)

"hangleiter,A.; Duboz, J.-y.; Kishino, K.; P

Elsevier - Usa

Ooopss! Este produto está temporariamente indisponível.
Mas não se preocupe, nós avisamos quando ele chegar.

Ooops! Este produto não está mais a venda.
Mas não se preocupe, temos uma versão atualizada para você.

Ooopss! Este produto está fora de linha, mas temos outras opções para você.
Veja nossas sugestões abaixo!

De: R$ 747,50

Por: R$ 672,75

em 1x no cartão de crédito
Crédito: R$ 747,50 em até 10x de R$ 74,75 sem juros
Boleto: R$ 672,75 (-10%)
Cartão Saraiva: 1x de R$ 672,75 (-10%)


Em até 1x sem juros de

Cartão Saraiva:


Em até 10x sem juros de

Nitrides And Related Wide Band Gap Materials



The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.) For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.


Peso 0.44 Kg
Produto sob encomenda Sim
Marca Elsevier - Usa
I.S.B.N. 9780080436159
Altura 0.00 cm
Largura 0.00 cm
Profundidade 0.00 cm
Número de Páginas 432
Idioma Inglês
Acabamento Capa dura
Cód. Barras 9780080436159
Número da edição 1
Ano da edição 19/8/1999
Autor"hangleiter,A.; Duboz, J.-y.; Kishino, K.; P